January.22, 2009
Insulated Gate Bipolar Transistor (IGBT) for xenon flash applications
Icp=150A realized in industry's smallest size (2.8mm×2.9mm)
| Product Name | TIG058E8 |
|---|---|
| Sample Shipping | February 2009 |
| Mass Production Plan | May 2009, 3M/month |
| Sample Price | $2.50 |
SANYO Semiconductor Co., Ltd. has developed the industry's smallest*1 IGBT for xenon flash to be used in portable camera cell phones and compact digital cameras.
SANYO Semiconductor holds over 40% share of the world market in IGBT technology and established itself as the market leader by continuously developing new products and technology. Implementing our original semiconductor micro-fabrication and packaging technology, we have developed a smaller product. The new IGBT reduces its mounting area by 60% compared to our current products while keeping the equivalent performance required for light control of the xenon flash. This new product is ideal for portable camera cell phones as well as compact digital cameras. Sample shipment is expected to begin in February 2009 and mass production to begin in May 2009.
The IGBT contributes to environmental friendliness by incorporating lead-free external terminals, halogen-free packaging, and reduction of rare metals used. Smaller, thinner, and high performance package leads to resource savings and energy efficiency.
*1 As of Jan. 22, 2009
*2 IGBT stands for Insulated Gate Bipolar Transistor.
Product Main Features
- Industry's smallest mounting area, ideal for portable camera cell phones.
By optimizing cell structure and enhancing effective working area ratio, the chip can be installed on the industry's smallest ECH8 package. This enables reduction of mounting area by 60% compared to our current products, which leads to the development of smaller xenon flash modules. - Mounting height 0.9mm
Industry's thinnest level was achieved by bonding wireless structure. Mounting height was reduced by 10% compared to current products. - Maximum Collector Current (Pulse)=150A.
SANYO's original bonding wireless structure is used in the package of TIG058E8. Direct bonding of copper frame with the chip enables higher operating efficiency and minimization of wiring resistance of electrode. This leads to the achievement of Icp=150A which is equivalent to our current products and sufficient in performance for digital camera applications.
| Current product TIG030TS |
New product TIG058E8 |
|
| External dimension | TSSOP8 | ECH8 |
| Horizontal and vertical | 6.4mm×3.0mm | 2.8mm×2.9mm |
| Area | 19.2mm² | 8.12mm² |
| Mounting height | 1.0mm | 0.9mm |
| Weight | 0.04g | 0.02g |
Specifications
- Collector-to-Emitter Maximum Voltage: 400V
- Maximum Collector Current (Pulse): 150A(VGE=4V)
- Maximum Collector-to-Emitter dv/dt: 400V/µs
- Gate-to-Emitter Threshold Voltage: 0.4 to 0.9V
- Collector-to-Emitter Saturation Voltage: 4.0V typ (Ic=100µA, VGE=4.0V)
5.6V max (Ic=100µA, VGE=4.0V)
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*The information presented in this press release, including device specifications, is current as of the date of this press release. Note, however, that this information is subject to change without notice and thus at later dates the current state may differ in certain details from the content presented here.
